infrared emitting diode, rohs compliant, 950 nm, gaas www.vishay.com for technical questions, contact: emittertechsupport@vishay.com document number: 81056 284 rev. 1.6, 05-sep-08 tsus5400, TSUS5401, tsus5402 vishay semiconductors description tsus5400 is an infrared, 950 nm emitting diode in gaas technology molded in a blue-gray tinted plastic package. features ? package type: leaded ? package form: t-1? ? dimensions (in mm): ? 5 ? leads with stand-off ? peak wavelength: p = 950 nm ? high reliability ? angle of half intensity: ? = 22 ? low forward voltage ? suitable for high pulse current operation ? good spectral matching with si photodetectors ? lead (pb)-free component in accordance with rohs 2002/95/ec and weee 2002/96/ec applications ? infrared remote control an d free air transmission systems with low forward voltage and small package requirements ? emitter in transmissive sensors ? emitter in reflective sensors note test conditions see tabl e ?basic char acteristics? note moq: minimum order quantity note t amb = 25 c, unless otherwise specified 94 8 390 product summary component i e (mw/sr) ? (deg) p (nm) t r (ns) tsus5400 14 22 950 800 TSUS5401 17 22 950 800 tsus5402 20 22 950 800 ordering information ordering code packaging remarks package form tsus5400 bulk moq: 4000 pcs, 4000 pcs/bulk t-1? TSUS5401 bulk moq: 4000 pcs, 4000 pcs/bulk t-1? tsus5402 bulk moq: 4000 pcs, 4000 pcs/bulk t-1? absolute maximum ratings parameter test condition symbol value unit reverse voltage v r 5v forward current i f 150 ma peak forward current t p /t = 0.5, t p = 100 s i fm 300 ma surge forward current t p = 100 s i fsm 2.5 a power dissipation p v 170 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 85 c storage temperature range t stg - 40 to + 100 c soldering temperature t 5 s, 2 mm from case t sd 260 c thermal resistance junction/ambient j-std-051, leads 7 mm, soldered on pcb r thja 230 k/w www..net
document number: 81056 for technical questi ons, contact: emittertechsupport@vishay.com www.vishay.com rev. 1.6, 05-sep-08 285 tsus5400, TSUS5401, tsus5402 infrared emitting diode, rohs compliant, 950 nm, gaas vishay semiconductors fig. 1 - power dissipation limit vs. ambient temperature fig. 2 - forward cu rrent limit vs. ambient temperature note t amb = 25 c, unless otherwise specified note t amb = 25 c, unless otherwise specified 0 20 40 60 8 0 100 120 140 160 1 8 0 010203040506070 8 0 90 100 21313 t am b - am b ient temperat u re (c) p v - po w er dissipation (m w ) r thja = 230 k/ w 0 20 40 60 8 0 100 120 0 10 203040 506070 8 0 90 100 t am b - am b ient temperat u re (c) 21314 i f - for w ard c u rrent (ma) r thja = 230 k/ w basic characteristics parameter test condition symbol min. typ. max. unit forward voltage i f = 100 ma, t p = 20 ms v f 1.3 1.7 v temperature coefficient of v f i f = 100 ma tk vf - 1.3 mv/k reverse current v r = 5 v i r 100 a junction capacitance v r = 0 v, f = 1 mhz, e = 0 c j 30 pf temperature coefficient of e i f = 20 ma tk e - 0.8 %/k angle of half intensity ? 22 deg peak wavelength i f = 100 ma p 950 nm spectral bandwidth i f = 100 ma ? 50 nm temperature coefficient of p i f = 100 ma tk p 0.2 nm/k rise time i f = 100 ma t r 800 ns i f = 1.5 a t r 400 ns fall time i f = 100 ma t f 800 ns i f = 1.5 a t f 400 ns virtual source diameter d 2.9 mm type dedicated characteristics parameter test condition part symbol min. typ. max. unit forward voltage i f = 1.5 a, t p = 100 s tsus5400 v f 2.2 3.4 v TSUS5401 v f 2.2 3.4 v tsus5402 v f 2.2 2.7 v radiant intensity i f = 100 ma, t p = 20 ms tsus5400 i e 71435mw/sr TSUS5401 i e 10 17 35 mw/sr tsus5402 i e 15 20 35 mw/sr i f = 1.5 a, t p = 100 s tsus5400 i e 60 140 mw/sr TSUS5401 i e 85 160 mw/sr tsus5402 i e 120 190 mw/sr radiant power i f = 100 ma, t p = 20 ms tsus5400 e 13 mw TSUS5401 e 14 mw tsus5402 e 15 mw www..net
www.vishay.com for technical questions, contact: emittertechsupport@vishay.com document number: 81056 286 rev. 1.6, 05-sep-08 tsus5400, TSUS5401, tsus5402 vishay semiconductors infrared emitting diode, rohs compliant, 950 nm, gaas basic characteristics t amb = 25 c, unless otherwise specified fig. 3 - pulse forward current vs. pulse duration fig. 4 - forward current vs. forward voltage fig. 5 - relative forward voltage vs. ambient temperature fig. 6 - radiant intensity vs. forward current fig. 7 - radiant power vs. forward current fig. 8 - relative radiant intensity/power vs. ambient temperature t p - p u lse d u ration (ms) 94 79 8 9 10 0 10 1 10 1 10 -1 10 -1 10 0 10 2 10 -2 i- for w ard c u rrent (a) f t p /t = 0.01 i fsm = 2.5 a ( single p u lse ) 0.05 0.1 0.5 1.0 94 7996 10 1 10 0 10 2 10 3 10 4 10 -1 i- for w ard c u rrent (ma) f 4 3 2 1 0 v f - for w ard v oltage ( v ) 0.7 0. 8 0.9 1.0 1.1 1.2 v f rel - relati v e for w ard v oltage ( v ) 94 7990 t am b - am b ient temperat u re (c) 100 8 0 60 40 20 0 i f = 10 ma i f - for w ard c u rrent (ma) 94 7997 10 3 10 1 10 2 10 4 10 0 1 10 100 1000 i - radiant intensity (m w /sr) e tsus5400 tsus 5401 tsus 5402 - radiant po w er (m w ) e i f - for w ard c u rrent (ma) 94 799 8 10 3 10 1 10 2 10 4 10 0 0.1 1 10 1000 100 tsus5400 tsus 5402 - 10 10 50 0 100 0 0.4 0. 8 1.2 1.6 i e rel ; 140 94 7993 i f = 20 ma e rel t am b - am b ient temperat u re (c) www..net
document number: 81056 for technical questi ons, contact: emittertechsupport@vishay.com www.vishay.com rev. 1.6, 05-sep-08 287 tsus5400, TSUS5401, tsus5402 infrared emitting diode, rohs compliant, 950 nm, gaas vishay semiconductors fig. 9 - relative radiant power vs. wavelength fig. 10 - relative radiant intensity vs. angular displacement package dimensions in millimeters 900 950 0 0.25 0.5 0.75 1.0 1.25 - w a v elength (nm) 1000 94 7994 e rel - relati v e radiant po w er i f = 100 ma 0.4 0.2 0 0.2 0.4 i - relati v e radiant intensity e rel 0.6 94 7999 0.6 0.9 0. 8 0 30 10 20 40 50 60 70 8 0 0.7 1.0 (4.1) 11.9 0.3 a c iss u e: 4; 23.04.9 8 34.9 0.55 < 0.7 1.2 + 0.2 - 0.1 0.5 + 0.15 - 0.05 5 0.15 2.54 nom. 0.5 + 0.15 - 0.05 5. 8 0.15 8 .7 0.3 7.7 0.15 1.5 0.25 area not plane technical dra w ings according to di n specifications r 2.49 (sphere) 6.544-525 8 .01-4 96 12119 www..net
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